Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
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DOI: 10.1063/5.0203526
Abstract: We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse… read more here.
Keywords: schottky diodes; nio ga2o3; trap states; ga2o3 heterojunctions ... See more keywords