Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106845
Abstract: Abstract κ-gallium oxide (Ga2O3) layers were hetero-epitaxially grown on c-plane sapphire substrates by halide vapor phase epitaxy (HVPE). Pure (001)-oriented κ-Ga2O3 with high crystal quality was obtained with this method on sapphire at 800 °C. Furthermore,… read more here.
Keywords: grown plane; ga2o3 layers; ga2o3; sapphire ... See more keywords
Sub-bandgap optical spectroscopy of epitaxial β-Ga2O3 thin films
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5143393
Abstract: Room temperature sub-gap optical absorption spectra measured by photothermal deflection spectroscopy were investigated for hetero- and homo-epitaxial β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy as well as for a bulk crystal. The absorption spectra… read more here.
Keywords: absorption spectra; ga2o3; epitaxial ga2o3; ga2o3 layers ... See more keywords
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060150
Abstract: This work reports on the epitaxial-film growth and characterization of a new wide-gap semiconductor α-Ga2O3. Layers are deposited by chloride vapor phase epitaxy on sapphire substrates with a basal orientation. The thickness of the layers… read more here.
Keywords: ga2o3 layers; thick ga2o3; ga2o3; layers sapphire ... See more keywords