The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device
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DOI: 10.1007/s10854-019-01185-4
Abstract: The modulating resistive switching behaviors accompanied ultraviolet (UV) photo response phenomena are demonstrated by changing the UV light intensities in the Ti/Ga2O3/Pt memory device. The analysis of the photodecay processes indicate that the UV light… read more here.
Keywords: memory device; ga2o3 memory; resistive switching; memory ... See more keywords