Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate
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DOI: 10.1088/1361-6641/acdab6
Abstract: In this paper, we proposed a novel junction-less Ga2O3 Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) with p-GaN gate, named p-GaN Ga2O3-MISFET. A heavily doped thin layer p-GaN is set in the trench gate region to deeply… read more here.
Keywords: vth; misfet; ga2o3 misfet; analytical model ... See more keywords