Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 V
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DOI: 10.1039/c9tc05161a
Abstract: The nature of ultra-wide energy bandgap (UWBG) semiconductors enables transistors to withstand large voltage swings, ensuring stable high-power and high-efficiency operation. The potential of UWBG β-Ga2O3 nano-field effect transistors (nano-FETs) has not been fully explored… read more here.
Keywords: ga2o3 nano; dual field; field; breakdown voltage ... See more keywords