Articles with "ga2o3 schottky" as a keyword



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Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

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Published in 2022 at "ACS Omega"

DOI: 10.1021/acsomega.2c00506

Abstract: We present the device properties of a nickel (Ni)–gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited… read more here.

Keywords: ga2o3 schottky; junction; film; schottky junction ... See more keywords
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A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode

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Published in 2019 at "Journal of Materials Chemistry C"

DOI: 10.1039/c9tc04912f

Abstract: A high-performance and easily fabricated Ni/β-Ga2O3 Schottky photodiode was developed for ultraviolet solar-blind detection. read more here.

Keywords: ga2o3 schottky; schottky photodiode; solar blind; high performance ... See more keywords
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Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5034444

Abstract: A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x… read more here.

Keywords: figure merit; ga2o3 schottky; reverse breakdown; schottky rectifiers ... See more keywords
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Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers

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Published in 2021 at "Applied Physics Letters"

DOI: 10.1063/5.0052601

Abstract: Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and… read more here.

Keywords: ga2o3 schottky; schottky rectifiers; non equilibrium; doped ga2o3 ... See more keywords
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Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

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Published in 2020 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/abce2c

Abstract: In this work, a detailed numerical simulation is carried out to model the current–voltage characteristics of a nickel/β-Ga2O3 Schottky barrier diode at different temperatures. These SBDs are produced using confined magnetic-field-based sputtering to deposit the… read more here.

Keywords: schottky barrier; ga2o3 schottky; diode; barrier diode ... See more keywords
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Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

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Published in 2021 at "Chinese Physics B"

DOI: 10.1088/1674-1056/ac2d1b

Abstract: The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga2O3 Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal–semiconductor–metal (MSM) Schottky photodetector, a unidirectional Schottky… read more here.

Keywords: high gain; ga2o3 schottky; gain; persistent photoconductivity ... See more keywords

Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers

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Published in 2019 at "ECS Journal of Solid State Science and Technology"

DOI: 10.1149/2.0101907jss

Abstract: The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique… read more here.

Keywords: electron injection; injection; temperature; ga2o3 schottky ... See more keywords