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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c00506
Abstract: We present the device properties of a nickel (Ni)–gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited…
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Keywords:
ga2o3 schottky;
junction;
film;
schottky junction ... See more keywords
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Published in 2019 at "Journal of Materials Chemistry C"
DOI: 10.1039/c9tc04912f
Abstract: A high-performance and easily fabricated Ni/β-Ga2O3 Schottky photodiode was developed for ultraviolet solar-blind detection.
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Keywords:
ga2o3 schottky;
schottky photodiode;
solar blind;
high performance ... See more keywords
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Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5034444
Abstract: A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x…
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Keywords:
figure merit;
ga2o3 schottky;
reverse breakdown;
schottky rectifiers ... See more keywords
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1
Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0052601
Abstract: Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and…
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Keywords:
ga2o3 schottky;
schottky rectifiers;
non equilibrium;
doped ga2o3 ... See more keywords
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Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abce2c
Abstract: In this work, a detailed numerical simulation is carried out to model the current–voltage characteristics of a nickel/β-Ga2O3 Schottky barrier diode at different temperatures. These SBDs are produced using confined magnetic-field-based sputtering to deposit the…
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Keywords:
schottky barrier;
ga2o3 schottky;
diode;
barrier diode ... See more keywords
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Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac2d1b
Abstract: The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga2O3 Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal–semiconductor–metal (MSM) Schottky photodetector, a unidirectional Schottky…
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Keywords:
high gain;
ga2o3 schottky;
gain;
persistent photoconductivity ... See more keywords
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Published in 2019 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0101907jss
Abstract: The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique…
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Keywords:
electron injection;
injection;
temperature;
ga2o3 schottky ... See more keywords