Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application
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DOI: 10.1016/j.apsusc.2020.148130
Abstract: Abstract The etching process of an ultra-wide bandgap β-Ga2O3 semiconductor is challenging, owing to its high chemical robustness and bond strength. We demonstrated the photoelectrochemical (PEC) etching of β-Ga2O3 using phosphoric acid as electrical potential… read more here.
Keywords: ultra wide; wide bandgap; ga2o3; bandgap ga2o3 ... See more keywords