Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
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DOI: 10.1063/5.0138736
Abstract: In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with… read more here.
Keywords: hcl gas; ga2o3 substrates; 001 ga2o3; dry etching ... See more keywords
Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
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DOI: 10.1063/5.0142746
Abstract: Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is demonstrated… read more here.
Keywords: alxga1 2o3; 2o3 thin; ga2o3 substrates; 001 ga2o3 ... See more keywords
The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth
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DOI: 10.3390/coatings11070824
Abstract: In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor… read more here.
Keywords: temperature; plane gan; epitaxial growth; ga2o3 substrates ... See more keywords