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1
Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.08.082
Abstract: Abstract e-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of e-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick…
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Keywords:
thin films;
ferroelectric properties;
ga2o3 thin;
properties ga2o3 ... See more keywords
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Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b00769
Abstract: Ga2O3, as an emerging optoelectronic material, is very appealing for the detection of ionizing radiation because of its low cost, wide band gap (4.5–5.0 eV) and radiation hardness. In this work, a flexible X-ray detector…
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Keywords:
flexible ray;
amorphous ga2o3;
film;
ray ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050421
Abstract: We report on the non-destructive measurement of Young’s modulus of thin-film single crystal beta gallium oxide (β-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract…
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Keywords:
corresponding orientation;
ga2o3;
young modulus;
orientation ga2o3 ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0147004
Abstract: β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped…
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Keywords:
doped ga2o3;
thin films;
films grown;
ga2o3 films ... See more keywords
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Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac2db7
Abstract: Alloying with the divalent elements (such as Zn and Mg) in β-Ga2O3 thin film can reduce the dark current and improve the photorespond speed for the solar-blind ultraviolet (UV) photodetector. However, alloying only with one…
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Keywords:
photodetector;
physics;
blind;
solar blind ... See more keywords
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Published in 2022 at "Materials"
DOI: 10.3390/ma15238362
Abstract: β-Ga2O3 thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work,…
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Keywords:
nucleation;
plane sapphire;
nucleation layer;
ga2o3 thin ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12091510
Abstract: Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga2O3 films was about 0.6 Å/cycle…
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Keywords:
enhanced atomic;
plasma enhanced;
thin films;
temperature ... See more keywords
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Published in 2019 at "Nanomaterials"
DOI: 10.3390/nano9091272
Abstract: In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV,…
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Keywords:
thin film;
film nanowires;
film;
catalyst ... See more keywords
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Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.101101
Abstract: Layer-by-layer morphology is a crucial signature of the quality of epitaxial thin films. In this study, layer-by-layer growth of an e-phase gallium oxide (e-Ga2O3) thin film is demonstrated using metal–organic chemical vapor deposition. A two-step…
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Keywords:
layer layer;
layer;
thin film;
film ... See more keywords