Superior High Temperature Performance of 8 kV NiO/Ga2O3 Vertical Heterojunction Rectifiers
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc01200j
Abstract: NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600K. For 100 µm diameter devices, the power figure of merit (VB)2/ RON, where RON is the on-state... read more here.
Keywords: superior high; temperature performance; nio ga2o3; high temperature ... See more keywords
SnO/β-Ga2O3 vertical pn heterojunction diodes
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0031442
Abstract: Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$.… read more here.
Keywords: heterojunction diodes; voltage; vertical heterojunction; sno ga2o3 ... See more keywords
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13060886
Abstract: Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001)… read more here.
Keywords: vertical rectifiers; nio ga2o3; reproducible nio; ga2o3 vertical ... See more keywords