Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)
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DOI: 10.1007/s12633-020-00559-2
Abstract: In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping… read more here.
Keywords: iii; potential based; gate around; center potential ... See more keywords