Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process
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DOI: 10.1109/led.2018.2807389
Abstract: In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time. Few reformed fin forming processes based on conventional… read more here.
Keywords: short channel; nanowire mosfets; process; gaa nanowire ... See more keywords