Explicit Threshold Voltage Modeling Insight for Short Channel Characterization of a WFE Elliptical GAA Strained-Si MOSFET
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DOI: 10.1007/s11664-020-08503-1
Abstract: This paper presents explicit analytical modeling of a gate all around (GAA) strained silicon metal-oxide-semicondutor field-effect transistor (MOSFET) with elliptical cross section by incorporating the popular gate work function engineering (WFE) concept of lateral mole… read more here.
Keywords: voltage; short channel; threshold voltage; gate ... See more keywords