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Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab52e4
Abstract: The impact of Line Edge Roughness (LER) on Gate-All-Around FETs (GAAFETs) with various channel types is investigated. Among various channel types of GAAFET, (i) nanowire (NW), (ii) nanosheet (NS), and (iii) stacked channel are investigated.…
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Keywords:
gaafet;
edge roughness;
effect;
channel gaafet ... See more keywords