Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.02.062
Abstract: Abstract The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area… read more here.
Keywords: thermal smoothing; atomic steps; surface; oxidation wet ... See more keywords
Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.12.029
Abstract: Abstract The growth of in plane highly mismatched GaSb nanotemplates free of threading dislocations on GaAs (001) substrate is demonstrated using selective area growth. We report a detailed comparison of the crystalline quality of GaSb… read more here.
Keywords: gasb; dislocation; gasb nanotemplates; growth ... See more keywords
Atomistic behaviour of (n × 3) -reconstructed areas of InAs-GaAs(001) surface at the growth condition
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.009
Abstract: Abstract We have investigated the spatial evolution of ( n × 3 ) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order… read more here.
Keywords: inas gaas; reconstructed areas; surface; growth ... See more keywords
Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing
Sign Up to like & getrecommendations! Published in 2018 at "Surface Science"
DOI: 10.1016/j.susc.2018.03.003
Abstract: Abstract The peculiarities of superstructural transition (2 × 4) → (3 × 1(6)) on the GaAs(001) surface were studied by the RHEED method in the conditions initiated by a sharp change of the arsenic flux. The specular beam intensities RHEED picture… read more here.
Keywords: structural changes; transition; surface; kinetics structural ... See more keywords
Reconstructions of the As-Terminated GaAs(001) Surface Exposed to Atomic Hydrogen
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c06019
Abstract: We explore the atomic structures and electronic properties of the As-terminated GaAs(001) surface in the presence of hydrogen based on ab initio density functional theory. We calculate a phase diagram dependent on the chemical potentials… read more here.
Keywords: gaas 001; terminated gaas; surface; hydrogen ... See more keywords
Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs(001)
Sign Up to like & getrecommendations! Published in 2018 at "Nature Physics"
DOI: 10.1038/s41567-018-0053-8
Abstract: As a fundamental parameter in magnetism, the phenomenological Gilbert damping constant α determines the performance of many spintronic devices. For most magnetic materials, α is treated as an isotropic parameter entering the Landau–Lifshitz–Gilbert equation. However,… read more here.
Keywords: gilbert damping; emergence anisotropic; anisotropic; gaas 001 ... See more keywords
Interface matching and intermixing of thin MgO barriers and ferromagnetic layers deposited on GaAs (001)
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4984754
Abstract: MgO tunneling barriers are extensively studied as a spin filtering and diffusion barrier for deposition of ferromagnetic layers on GaAs (001) surfaces. The relatively large lattice mismatch of the MgO and GaAs substrate and probable… read more here.
Keywords: mgo; microscopy; gaas 001; interface ... See more keywords
The evolution of in-plane magnetic anisotropy in CoFeB/GaAs(001) films annealed at different temperatures
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5004512
Abstract: A considerable in-plane uniaxial magnetic anisotropy (UMA) field (Hu ∼ 300 Oe) could be achieved when the amorphous CoFeB film was deposited on the GaAs(001) wafer by magnetron-sputtering after proper etch-annealed procedure. In order to… read more here.
Keywords: cofeb; annealed different; magnetic anisotropy; plane ... See more keywords
Temperature-dependent interface stability of MoO3/GaAs(001) hybrid structures
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5050859
Abstract: We report on the influence of growth temperature and post-growth annealing on interface formation and film structure of thin MoO 3 films on GaAs(001), which plays an important role for a future application as carrier-selective… read more here.
Keywords: microscopy; spectroscopy; interface; growth ... See more keywords
Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/7/076105
Abstract: We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface… read more here.
Keywords: thin films; buffer layers; insb thin; without buffer ... See more keywords
Dynamics of Laser-Induced Magnetostructural Phase Transitions in MnAs/GaAs (001) Epitaxial Layers
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2017.2692209
Abstract: We have investigated by time-resolved X-ray diffraction the manganese arsenide structure dynamics in MnAs/GaAs (001) epitaxial films, when the $\alpha \to \beta $ magnetostructural phase transition is triggered by an ultra-fast optical laser pulse. Understanding… read more here.
Keywords: mnas gaas; 001 epitaxial; magnetostructural phase; gaas 001 ... See more keywords