Surface Morphology Evolution and Underlying Defects in Homoepitaxial Growth of GaAs (110)
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159848
Abstract: Abstract The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer thickness up to 1 μm. Ga and As atoms coexisting in a… read more here.
Keywords: growth; surface; defects homoepitaxial; surface morphology ... See more keywords
Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5026630
Abstract: High quality, epitaxial thin-films are key components of almost all modern electronic devices. During deposition, lattice mismatch between the substrate and the film generates elastic strain. The strain energy grows with film thickness until a… read more here.
Keywords: epitaxial electrodeposition; gaas 110; film; strain ... See more keywords