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   Articles with "gaas 111" as a keyword



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Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

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recommendations! Published in 2018 at "Journal of Physical Chemistry C"

DOI: 10.1021/acs.jpcc.8b01838

Abstract: Bismuth thin films constitute a promising nanostructure for the fabrication of spin-based devices. To achieve this goal, it is necessary to obtain high-quality Bi layers with controlled and reproducible properties. Therefore, studies focused on the… read more here.

Keywords: thin films; nucleation process; gaas 111; nucleation ... See more keywords
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A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

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recommendations! Published in 2023 at "ACS Nano"

DOI: 10.1021/acsnano.2c12863

Abstract: Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are needed. Bismuthene, a… read more here.

Keywords: structure; honeycomb structure; spectroscopy; gaas 111 ... See more keywords
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Strain-induced circular photogalvanic current in Dirac semimetal Cd3As2 films epitaxied on a GaAs(111)B substrate.

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recommendations! Published in 2022 at "Nanoscale"

DOI: 10.1039/d1nr05812f

Abstract: Dirac semimetal (DSM) Cd3As2 has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin orientation transport, was theoretically predicted to… read more here.

Keywords: cpge; cd3as2; gaas 111; dirac ... See more keywords
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Strain-driven InAs island growth on top of GaAs(111) nanopillars

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recommendations! Published in 2020 at "Physical Review Materials"

DOI: 10.1103/physrevmaterials.4.014602

Abstract: We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results… read more here.

Keywords: growth; gaas 111; 111 nanopillars; strain driven ... See more keywords