Theoretical investigation of hot electron cooling process in GaAs/AlAs cylindrical quantum wire under the influence of an intense electromagnetic wave
Sign Up to like & getrecommendations! Published in 2018 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1606-x
Abstract: Hot electrons cooling by phonons in GaAs/AlAs cylindrical quantum wire (CQW), under the influence of an intense electromagnetic wave (EMW), is studied theoretically. Analytic expression for the electron cooling power (CP) is derived from the… read more here.
Keywords: quantum; energy; gaas alas; influence ... See more keywords
Effects of size quantization in the spectra and Γ − M transitions in (GaAs) (AlAs) (001) superlattices
Sign Up to like & getrecommendations! Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.05.034
Abstract: Abstract Based on the pseudopotential method and the phenomenological model of coupling forces, electron scattering by short-wavelength phonons in the conduction band of superlattices ( GaAs)m(AlAs)n with thin layers (n, m ≤ 10) is studied. Intervalley… read more here.
Keywords: quantization spectra; transitions gaas; gaas alas; size quantization ... See more keywords
AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime
Sign Up to like & getrecommendations! Published in 2019 at "JETP Letters"
DOI: 10.1134/s0021364019130095
Abstract: The direct-current (dc) $\sigma_{xx}^{dc}$ and alternating-current (ac) $\sigma_{xx}^{ac}=\sigma_1-i\sigma_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $\sigma_{xx}$… read more here.
Keywords: quantum well; sigma sigma; gaas alas; conductivities gaas ... See more keywords
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617110203
Abstract: It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs… read more here.
Keywords: alas based; alas heterojunction; gaas alas; based heterostructures ... See more keywords
First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-018-2719-7
Abstract: Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend… read more here.
Keywords: superlattice; point defects; gaas alas; alas superlattice ... See more keywords
Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes
Sign Up to like & getrecommendations! Published in 2023 at "Technical Physics Letters"
DOI: 10.21883/tpl.2023.01.55350.19395
Abstract: Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine… read more here.
Keywords: double barrier; gaas alas; tunneling diodes; resonant tunneling ... See more keywords