Evidence of Optical Circular Dichroism in GaAs-Based Nanowires Partially Covered with Gold
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Optical Materials"
DOI: 10.1002/adom.201601063
Abstract: Semiconductor nanostructures hybridized with metals have been known to offer new opportunities in nonlinear optics, plasmonics, lasing, biosensors; among them GaAs-based nanowires (NWs) hybridized with gold can offer new functionalities, as chiral sensing and light… read more here.
Keywords: based nanowires; gaas based; partially covered; circular dichroism ... See more keywords
Strong and narrowband terahertz radiation from GaAs based pHEMT and terahertz imaging
Sign Up to like & getrecommendations! Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32525
Abstract: Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is… read more here.
Keywords: phemt; strong narrowband; terahertz; radiation ... See more keywords
Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors
Sign Up to like & getrecommendations! Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-1258-2
Abstract: Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors has been investigated. Device structure, numerical models and simulation techniques are described in detail. By careful model and parameter calibration, the numerical… read more here.
Keywords: bib detectors; gaas based; acceptor concentration; transport ... See more keywords
On the reliability of pulse power saturation models for broad-area GaAs-based lasers
Sign Up to like & getrecommendations! Published in 2019 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-019-1776-1
Abstract: With short current pulses, GaAs-based lasers can achieve high output powers if self-heating and catastrophic optical damage are suppressed. However, the pulse power is still severely limited by internal saturation mechanisms. Over the past decade,… read more here.
Keywords: based lasers; pulse power; saturation; gaas based ... See more keywords
Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors
Sign Up to like & getrecommendations! Published in 2019 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-019-2150-z
Abstract: Temperature-dependent spectral response mechanism in GaAs-based blocked-impurity-band (BIB) far-infrared detectors has been investigated. Device structure, processing steps and physical models are described in detail. In this work, our discussion is mainly focused on the operation… read more here.
Keywords: gaas based; temperature; tope; bib ... See more keywords
Performance analysis of GaAs based solar cells under gamma irradiation
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145329
Abstract: Abstract The influence of gamma irradiation on gallium arsenide based photovoltaic cells was investigated. This type of solar cell is used for advanced space application where radiation degradation occurs in particular. A synthetic radioactive isotope… read more here.
Keywords: performance analysis; gaas based; irradiation; analysis gaas ... See more keywords
Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm
Sign Up to like & getrecommendations! Published in 2017 at "Iet Optoelectronics"
DOI: 10.1049/iet-opt.2016.0068
Abstract: Tunable diode lasers are essential components in various optical systems. The authors present a concept and simulations of a four-section, widely tunable GaAs-based sampled-grating (SG) distributed-Bragg reflector (DBR) laser emitting at 976 nm. This work… read more here.
Keywords: gaas based; laser; based sampled; widely tunable ... See more keywords
Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0002247
Abstract: Cross-correlated noise measurements are performed in etched Al x Ga 1 − xAs/GaAs based quantum rings in equilibrium at a bath temperature of T bath = 4.2 K. The measured white noise exceeds the thermal… read more here.
Keywords: gaas based; quantum rings; excess noise; noise ... See more keywords
Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0145680
Abstract: The strain field of the emitters of one unstressed and two electrically stressed oxide-confined GaAs-based vertical-cavity surface-emitting lasers has been analyzed. The components of the strain tensor in the optical aperture, in the quantum wells,… read more here.
Keywords: based vertical; confined gaas; vertical cavity; strain field ... See more keywords
Application of a GaAs-Based Sensor for Detecting Hemoglobin in Gastrointestinal Environments
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2016.2633435
Abstract: In clinical applications, inspection of the hemorrhagic spots in the gastrointestinal (GI) tract is a challenging task. The hybrid GaAs-based device, developed by us, has been successfully used for sensing hemoglobin (Hb) in biological solutions.… read more here.
Keywords: gaas based; sensor detecting; application gaas; based sensor ... See more keywords
Continuous-Wave Operation of GaAs-Based 1.5- $\mu$ m GaInNAsSb VCSELs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2019.2938177
Abstract: We demonstrate the first electrically-pumped, GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1500 nm range that operate in continuous wave mode at and above room temperature. The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum… read more here.
Keywords: wave operation; gainnassb vcsels; gaas based; operation gaas ... See more keywords