Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method
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DOI: 10.1002/crat.201700052
Abstract: In this wok, a novel multi-crucible Bridgman method is developed to produce the O 2 inch Si-doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same… read more here.
Keywords: gaas crystals; crucible bridgman; bridgman method; doped gaas ... See more keywords