Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnologies in Russia"
DOI: 10.1134/s199507801801007x
Abstract: The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion current and single FIB exposure time on the geometric characteristics of the… read more here.
Keywords: ion beams; gaas epitaxial; nanoscale profiling; ion ... See more keywords
Characteristics of terahertz wave emissions under the coexistence of different sub-picosecond transient phenomena in GaAs epitaxial films
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abec59
Abstract: We report on the characteristics of the terahertz waveform originating from both the nonequilibrium transport of photogenerated carriers and the longitudinal optical phonon-plasmon coupled mode in GaAs epitaxial structures having a built-in electric field. The… read more here.
Keywords: wave emissions; gaas epitaxial; transient phenomena; characteristics terahertz ... See more keywords
Electric field dependence of terahertz wave emission in temperature-controlled GaAs epitaxial films
Sign Up to like & getrecommendations! Published in 2022 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac5fc7
Abstract: We have investigated the dependence of terahertz wave emissions on the internal electric field in undoped GaAs/n-type GaAs epitaxial structures irradiated by ultrashort laser pulses. The undoped layer has an electric field, the strength of… read more here.
Keywords: dependence terahertz; field; electric field; terahertz wave ... See more keywords