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   Articles with "gaas gaas" as a keyword



Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates

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recommendations! Published in 2019 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2019.02.010

Abstract: GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with… read more here.

Keywords: sublattice reversal; alas alas; alas heterostructures; gaas ... See more keywords

Electrical characterization and dielectric impedance of Au/n-CdS/p-porous GaAs/p++-GaAs thin film structures

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recommendations! Published in 2017 at "Journal of Applied Physics"

DOI: 10.1063/1.4983095

Abstract: Current-voltage, capacitance-voltage-frequency characteristics, and impedance spectroscopy (IS) under conditions of reverse and forward bias are reported in Au/CdS/porous GaAs/GaAs devices. By comparing the C-V and C-f measurements, a possible existence of two depletion layers in… read more here.

Keywords: characterization dielectric; cds porous; electrical characterization; impedance ... See more keywords

Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core–shell nanowires monitored by in situ x-ray diffraction

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recommendations! Published in 2024 at "Nanotechnology"

DOI: 10.1088/1361-6528/ad3fc1

Abstract: We report on the fabrication of a novel design of GaAs/(In,Ga)As/GaAs radial nanowire heterostructures on a Si 111 substrate, where, for the first time, the growth of inhomogeneous shells on a lattice mismatched core results… read more here.

Keywords: shell; core; gaas gaas; gaas ... See more keywords

Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities

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recommendations! Published in 2019 at "Semiconductors"

DOI: 10.1134/s1063782619060241

Abstract: The current–voltage characteristics of n+-GaAs/n0-GaAs/N0-AlGaAs/N+-AlGaAs/n+-GaAs isotype heterostructures and n+-GaAs/n0-GaAs/n+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n0-GaAs into N0-AlGaAs, the maximum operating voltage… read more here.

Keywords: specific features; differential resistance; voltage; negative differential ... See more keywords