Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates
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DOI: 10.1016/j.jcrysgro.2019.02.010
Abstract: GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with… read more here.
Keywords: sublattice reversal; alas alas; alas heterostructures; gaas ... See more keywords
Electrical characterization and dielectric impedance of Au/n-CdS/p-porous GaAs/p++-GaAs thin film structures
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DOI: 10.1063/1.4983095
Abstract: Current-voltage, capacitance-voltage-frequency characteristics, and impedance spectroscopy (IS) under conditions of reverse and forward bias are reported in Au/CdS/porous GaAs/GaAs devices. By comparing the C-V and C-f measurements, a possible existence of two depletion layers in… read more here.
Keywords: characterization dielectric; cds porous; electrical characterization; impedance ... See more keywords
Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities
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DOI: 10.1134/s1063782619060241
Abstract: The current–voltage characteristics of n+-GaAs/n0-GaAs/N0-AlGaAs/N+-AlGaAs/n+-GaAs isotype heterostructures and n+-GaAs/n0-GaAs/n+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n0-GaAs into N0-AlGaAs, the maximum operating voltage… read more here.
Keywords: specific features; differential resistance; voltage; negative differential ... See more keywords