Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
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DOI: 10.1134/s1063782618020173
Abstract: The results of an experimental study of the capacitance–voltage (C–V) characteristics and deep-level transient spectroscopy (DLTS) spectra of p+–p0–i–n0 homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of… read more here.
Keywords: gaas gaassb; gaas; gaassb gaas; dislocation related ... See more keywords