Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac32a7
Abstract: GaAs/GaNAsBi/GaAs core–multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately… read more here.
Keywords: multishell nanowires; core multishell; gaas ganasbi; ganasbi ... See more keywords