Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
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DOI: 10.1007/s10825-018-1136-6
Abstract: Tunneling field-effect transistor (TFET) suffers from ultra-sharp doping concentration gradients in both the source/channel junction and drain/channel junction. Recently, the junctionless (JL) TFET device has been proposed to avoid the issue of ultra-sharp doping concentration… read more here.
Keywords: gasb hjl; hjl tfet; hjl; gaas gasb ... See more keywords
Numerical modeling of opto-electric characterization of GaAs/GaSb nanowire solar cells
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DOI: 10.1007/s11082-019-2187-z
Abstract: Numerical simulation of opto-electric characterization of GaAs/GaSb core–shell nanowire solar cells is presented, using a finite difference time-domain modeling method. The results show that the absorption, external quantum efficiency and the reflection of the NW… read more here.
Keywords: solar cells; characterization gaas; electric characterization; gaas gasb ... See more keywords
Efficient Use of Low-Bandgap GaAs/GaSb to Convert More than 50% of Solar Radiation into Electrical Energy: A Numerical Approach
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DOI: 10.1007/s11664-018-6743-2
Abstract: A recent trend in photovoltaic technology is to aim to enhance the conversion efficiency of this energy harvesting technique. Although multijunction solar cells offer high efficiency, factors such as fabrication cost, cost per watt of… read more here.
Keywords: efficient use; energy; gaas gasb; approach ... See more keywords