High nitrogen composition–induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy
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DOI: 10.1016/j.materresbull.2016.12.032
Abstract: Abstract GaAs 1−x N x /GaAs multiple quantum wells (MQWs) were grown on GaAs(001) substrates through solid-source molecular beam epitaxy under various nitrogen background pressures (NBPs), and the crystal quality at the interface of GaAs… read more here.
Keywords: nitrogen; multiple quantum; gaas; gaas multiple ... See more keywords
Optical Characterization of a 20 Layer AlGaAs/GaAs Multiple Quantum Wells
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DOI: 10.3938/jkps.73.632
Abstract: A 20-layer Al0.4Ga0.6As/GaAs multiple quantum well (MQW) sample was deposited on a GaAs substrate by using the molecular beam epitaxy (MBE) method. Optical characterization was carried out by power and temperature dependent photoluminescence (PL) for… read more here.
Keywords: temperature; layer; multiple quantum; optical characterization ... See more keywords