Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change
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DOI: 10.1002/er.6310
Abstract: In order to improve the photoemission characteristics of the GaAs photocathode, GaAs nanostructures (nanoholes and nanowires) with three sublayers and Al component of gradient distribution are designed in this article. Finite element method was used… read more here.
Keywords: theoretical study; gaas nanostructures; component gradient; study optoelectronic ... See more keywords
Effect of pressure and time on the self catalyzed growth of epitaxial GaAs nanostructures by MOCVD
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DOI: 10.1016/j.vacuum.2019.03.046
Abstract: Abstract Epitaxial GaAs nanostructures have been grown on GaAs (111)B surface by metal organic chemical vapor deposition (MOCVD) using in situ self assembled Gallium (Ga) droplets as catalyst. The effect of growth pressure and time… read more here.
Keywords: gaas nanostructures; epitaxial gaas; growth; pressure time ... See more keywords
Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy
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DOI: 10.1063/5.0039107
Abstract: A nondestructive approach is described that is applicable for studying the In-segregation phenomena in ultra-thin In(Ga)As/GaAs nanostructures grown by molecular beam epitaxy. The proposed method utilizes only the experimental photoluminescence (PL) spectroscopy data and the… read more here.
Keywords: ultra thin; gaas; thin gaas; spectroscopy ... See more keywords