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Published in 2018 at "Nano Research"
DOI: 10.1007/s12274-018-1984-1
Abstract: Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth anddirect vapour-solid (VS) growth on the sidewall. To investigate both effects in ahighly controlled way,…
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Keywords:
selective area;
diameter evolution;
gaas nanowires;
growth ... See more keywords
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Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145906
Abstract: Abstract Utilizing first-principles calculations, we have systematically investigated on the impact of surface point defects on the stability, electronic and optical properties of pristine and Zn-doped GaAs nanowires. Different defect types (antisite, interstitial and vacancy…
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Keywords:
pristine doped;
point defects;
gaas nanowires;
doped gaas ... See more keywords
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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.009
Abstract: Abstract We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by…
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Keywords:
growth;
movpe;
gaas nanowires;
gaas ... See more keywords
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Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.07.003
Abstract: Abstract The adsorption of three gases on the wurtzite GaAs nanowires (100) surface are systematically studied via first principles. The optoelectronic properties of GaAs nanowires absorbed by CH 4 , H 2 and H 2…
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Keywords:
gas;
surface;
first principles;
adsorption ... See more keywords
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Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.03.011
Abstract: Abstract In this study, we investigate the Cs adsorption mechanism on (110) surface of zinc-blende GaAs nanowire. The adsorption energy, work function, dipole moment, geometric structure, Mulliken charge distribution, charge transfer index, band structures, density…
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Keywords:
adsorption;
surface;
optical properties;
nanowire surface ... See more keywords
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Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.8b05459
Abstract: Despite the unavoidable presence of silicon atoms in the catalyst alloy droplets during the vapor–liquid–solid growth of III–V nanowires on silicon substrates, it remains unknown how the nucleation of nanowires is affected by these foreign…
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Keywords:
nanowires silicon;
silicon substrates;
nucleation;
gaas nanowires ... See more keywords
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Published in 2021 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c00349
Abstract: Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which…
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Keywords:
gaas;
selective area;
self catalyzed;
gaas nanowires ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c04680
Abstract: Twinning superlattices (TSLs) are a growing class of semiconductor structures proposed as a means of phonon and optical engineering in nanowires (NWs). In this work, we examine TSL formation in Te-doped GaAs NWs grown by…
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Keywords:
superlattice doped;
phase diagram;
diagram twinning;
gaas nanowires ... See more keywords
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Published in 2023 at "Nano Letters"
DOI: 10.1021/acs.nanolett.3c00026
Abstract: The generation of photon pairs from nanoscale structures with high rates is still a challenge for the integration of quantum devices, as it suffers from parasitic signals from the substrate. In this work, we report…
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Keywords:
free near;
infrared biphoton;
gaas nanowires;
near infrared ... See more keywords
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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b00794
Abstract: A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires…
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Keywords:
fold symmetric;
symmetric doping;
three fold;
gaas nanowires ... See more keywords
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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b03126
Abstract: Achieving quantum confinement by bottom-up growth of nanowires has so far been limited to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within reach for gold-assisted growth.…
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Keywords:
growth;
self assisted;
contact angle;
gaas nanowires ... See more keywords