Articles with "gaas nanowires" as a keyword



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Diameter evolution of selective area grown Ga-assisted GaAs nanowires

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Published in 2018 at "Nano Research"

DOI: 10.1007/s12274-018-1984-1

Abstract: Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth anddirect vapour-solid (VS) growth on the sidewall. To investigate both effects in ahighly controlled way,… read more here.

Keywords: selective area; diameter evolution; gaas nanowires; growth ... See more keywords
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Intrinsic point defects in pristine and Zn-doped GaAs nanowire surfaces: A first-principles investigation

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Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.145906

Abstract: Abstract Utilizing first-principles calculations, we have systematically investigated on the impact of surface point defects on the stability, electronic and optical properties of pristine and Zn-doped GaAs nanowires. Different defect types (antisite, interstitial and vacancy… read more here.

Keywords: pristine doped; point defects; gaas nanowires; doped gaas ... See more keywords
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Growth and characterization of GaAs nanowires on Ge(1 1 1) substrates by selective-area MOVPE

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Published in 2019 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2018.10.009

Abstract: Abstract We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by… read more here.

Keywords: growth; movpe; gaas nanowires; gaas ... See more keywords
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Optoelectronic properties of GaAs nanowire on the (100) surface adsorbed gas molecules: First-principles study

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Published in 2019 at "Physica B: Condensed Matter"

DOI: 10.1016/j.physb.2019.07.003

Abstract: Abstract The adsorption of three gases on the wurtzite GaAs nanowires (100) surface are systematically studied via first principles. The optoelectronic properties of GaAs nanowires absorbed by CH 4 , H 2 and H 2… read more here.

Keywords: gas; surface; first principles; adsorption ... See more keywords
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The electronic and optical properties of Cs adsorbed GaAs nanowires via first-principles study

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Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"

DOI: 10.1016/j.physe.2018.03.011

Abstract: Abstract In this study, we investigate the Cs adsorption mechanism on (110) surface of zinc-blende GaAs nanowire. The adsorption energy, work function, dipole moment, geometric structure, Mulliken charge distribution, charge transfer index, band structures, density… read more here.

Keywords: adsorption; surface; optical properties; nanowire surface ... See more keywords
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Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

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Published in 2018 at "Journal of Physical Chemistry C"

DOI: 10.1021/acs.jpcc.8b05459

Abstract: Despite the unavoidable presence of silicon atoms in the catalyst alloy droplets during the vapor–liquid–solid growth of III–V nanowires on silicon substrates, it remains unknown how the nucleation of nanowires is affected by these foreign… read more here.

Keywords: nanowires silicon; silicon substrates; nucleation; gaas nanowires ... See more keywords
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Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon.

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Published in 2021 at "Nano letters"

DOI: 10.1021/acs.nanolett.1c00349

Abstract: Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which… read more here.

Keywords: gaas; selective area; self catalyzed; gaas nanowires ... See more keywords
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Phase Diagram for Twinning Superlattice Te-Doped GaAs Nanowires.

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Published in 2022 at "Nano letters"

DOI: 10.1021/acs.nanolett.1c04680

Abstract: Twinning superlattices (TSLs) are a growing class of semiconductor structures proposed as a means of phonon and optical engineering in nanowires (NWs). In this work, we examine TSL formation in Te-doped GaAs NWs grown by… read more here.

Keywords: superlattice doped; phase diagram; diagram twinning; gaas nanowires ... See more keywords
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Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires

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Published in 2023 at "Nano Letters"

DOI: 10.1021/acs.nanolett.3c00026

Abstract: The generation of photon pairs from nanoscale structures with high rates is still a challenge for the integration of quantum devices, as it suffers from parasitic signals from the substrate. In this work, we report… read more here.

Keywords: free near; infrared biphoton; gaas nanowires; near infrared ... See more keywords
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Three-fold Symmetric Doping Mechanism in GaAs Nanowires.

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Published in 2017 at "Nano letters"

DOI: 10.1021/acs.nanolett.7b00794

Abstract: A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires… read more here.

Keywords: fold symmetric; symmetric doping; three fold; gaas nanowires ... See more keywords
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Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires.

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Published in 2018 at "Nano letters"

DOI: 10.1021/acs.nanolett.7b03126

Abstract: Achieving quantum confinement by bottom-up growth of nanowires has so far been limited to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within reach for gold-assisted growth.… read more here.

Keywords: growth; self assisted; contact angle; gaas nanowires ... See more keywords