Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618160194
Abstract: The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth.… read more here.
Keywords: native oxide; depth; omposition depth; depth profiling ... See more keywords