High photoconductive gain in a GaAs/PbS heterojunction based SWIR detector
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DOI: 10.1063/5.0018219
Abstract: An internal quantum efficiency (IQE), defined as the electron–hole pair to photon conversion ratio, of ∼10 was obtained for an n-GaAs/p-PbS heterojunction when illuminating the device with short wavelength infrared (SWIR) light in the wavelength… read more here.
Keywords: heterojunction; gaas pbs; high photoconductive; photoconductive gain ... See more keywords