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Published in 2020 at "Journal of Low Temperature Physics"
DOI: 10.1007/s10909-020-02477-4
Abstract: Abstract We have studied analytically the persistent current and the magnetization of two electrons trapped by a circular parabolic GaAs quantum dot using the canonical ensemble approach. We have investigated their behavior as a function…
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Keywords:
temperature;
gaas quantum;
low temperatures;
parabolic gaas ... See more keywords
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Published in 2019 at "Current Applied Physics"
DOI: 10.1016/j.cap.2019.07.010
Abstract: Abstract We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile…
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Keywords:
study inas;
raman study;
quantum dot;
inas gaas ... See more keywords
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Published in 2020 at "Chinese Journal of Physics"
DOI: 10.1016/j.cjph.2020.04.013
Abstract: Abstract Based on the effective mass approximation, the magnetic and thermal properties of parabolic GaAs quantum dot have been investigated in the presence of Rashba Spin-Orbit interaction (RSOI), donor impurity and applied magnetic and electric…
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Keywords:
gaas quantum;
donor impurity;
quantum dot;
interaction ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.022
Abstract: Abstract Growth of InGaAs/GaAs quantum dots (QDs) in inverted pyramids on pre-patterned {111}B GaAs substrates is a versatile technique allowing for precise site and emission energy control. We report on the fabrication of QDs with…
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Keywords:
gaas quantum;
control;
emission wavelength;
ingaas gaas ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.02.046
Abstract: Abstract Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1 0 0) GaAs substrates using selective area epitaxy (SAE). The…
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Keywords:
gaas substrates;
gaas quantum;
diblock copolymer;
growth ... See more keywords
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Published in 2019 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2018.07.030
Abstract: Abstract The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique…
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Keywords:
solar cells;
gasb gaas;
emission;
capture ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.08.010
Abstract: Abstract In this paper, we theoretically report competition behaviour of size and strain effects on the InAs/GaAs quantum dots (QDs) eigenenergies, the envelop functions and also transition energies of the z-polarized WL-to-S states with varying…
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Keywords:
inas gaas;
gaas quantum;
strain size;
size ... See more keywords
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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.04.003
Abstract: Abstract In this work, the low temperature PL spectrum of GaSbBi ternary alloys and GaSbBi/GaAs Quantum Dots (QDs) are investigated using two different mathematical models. The first model based on the Gaussian distribution of the…
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Keywords:
quantum dots;
gasbbi gaas;
temperature;
alloys gasbbi ... See more keywords
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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b04603
Abstract: Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor…
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Keywords:
elastic distortions;
distortions gaas;
gaas quantum;
quantum dot ... See more keywords
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Published in 2017 at "ACS Photonics"
DOI: 10.1021/acsphotonics.7b00240
Abstract: As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize…
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Keywords:
temperature;
gaas quantum;
gaas;
grown molecular ... See more keywords
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Published in 2019 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b01749
Abstract: We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated…
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Keywords:
single plasmon;
quantum dot;
inas gaas;
plasmon generation ... See more keywords