Articles with "gaas quantum" as a keyword



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Solvable Model of the Thermal Persistent Current at Low Temperatures of Two-Electron Parabolic GaAs Quantum Dot

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Published in 2020 at "Journal of Low Temperature Physics"

DOI: 10.1007/s10909-020-02477-4

Abstract: Abstract We have studied analytically the persistent current and the magnetization of two electrons trapped by a circular parabolic GaAs quantum dot using the canonical ensemble approach. We have investigated their behavior as a function… read more here.

Keywords: temperature; gaas quantum; low temperatures; parabolic gaas ... See more keywords
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Raman study of InAs/GaAs quantum dot solar cells

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Published in 2019 at "Current Applied Physics"

DOI: 10.1016/j.cap.2019.07.010

Abstract: Abstract We report polarized and resonant Raman study of InAs/GaAs quantum dot solar cell (QDSC) structures. Raman spectra obtained from the top surfaces of the samples suggested that the formation of InAs QDs induced tensile… read more here.

Keywords: study inas; raman study; quantum dot; inas gaas ... See more keywords
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Rashba spin-orbit interaction effects on thermal and magnetic properties of parabolic GaAs quantum dot in the presence of donor impurity under external electric and magnetic fields

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Published in 2020 at "Chinese Journal of Physics"

DOI: 10.1016/j.cjph.2020.04.013

Abstract: Abstract Based on the effective mass approximation, the magnetic and thermal properties of parabolic GaAs quantum dot have been investigated in the presence of Rashba Spin-Orbit interaction (RSOI), donor impurity and applied magnetic and electric… read more here.

Keywords: gaas quantum; donor impurity; quantum dot; interaction ... See more keywords
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Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2016.11.022

Abstract: Abstract Growth of InGaAs/GaAs quantum dots (QDs) in inverted pyramids on pre-patterned {111}B GaAs substrates is a versatile technique allowing for precise site and emission energy control. We report on the fabrication of QDs with… read more here.

Keywords: gaas quantum; control; emission wavelength; ingaas gaas ... See more keywords
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Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.02.046

Abstract: Abstract Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1 0 0) GaAs substrates using selective area epitaxy (SAE). The… read more here.

Keywords: gaas substrates; gaas quantum; diblock copolymer; growth ... See more keywords
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Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

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Published in 2019 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2018.07.030

Abstract: Abstract The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique… read more here.

Keywords: solar cells; gasb gaas; emission; capture ... See more keywords
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Investigation of intersubband transitions in truncated pyramid-shaped InAs/GaAs quantum dots coupled to wetting layer: Strain and size matter

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Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.08.010

Abstract: Abstract In this paper, we theoretically report competition behaviour of size and strain effects on the InAs/GaAs quantum dots (QDs) eigenenergies, the envelop functions and also transition energies of the z-polarized WL-to-S states with varying… read more here.

Keywords: inas gaas; gaas quantum; strain size; size ... See more keywords
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Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots

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Published in 2019 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2019.04.003

Abstract: Abstract In this work, the low temperature PL spectrum of GaSbBi ternary alloys and GaSbBi/GaAs Quantum Dots (QDs) are investigated using two different mathematical models. The first model based on the Gaussian distribution of the… read more here.

Keywords: quantum dots; gasbbi gaas; temperature; alloys gasbbi ... See more keywords
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Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

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Published in 2018 at "Nano letters"

DOI: 10.1021/acs.nanolett.7b04603

Abstract: Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor… read more here.

Keywords: elastic distortions; distortions gaas; gaas quantum; quantum dot ... See more keywords
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1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

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Published in 2017 at "ACS Photonics"

DOI: 10.1021/acsphotonics.7b00240

Abstract: As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize… read more here.

Keywords: temperature; gaas quantum; gaas; grown molecular ... See more keywords
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Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator

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Published in 2019 at "ACS Photonics"

DOI: 10.1021/acsphotonics.8b01749

Abstract: We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated… read more here.

Keywords: single plasmon; quantum dot; inas gaas; plasmon generation ... See more keywords