Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
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DOI: 10.1016/j.jallcom.2021.159596
Abstract: Abstract Au/GaN/n-GaAs Schottky Barrier Diodes (SBDs) were fabricated by N2 plasma Nitridation of n-GaAs (100) surface yielding to the formation of GaN ultra thin film interfacial layer between AuSchottky contact and n-GaAs substrate. Samples were… read more here.
Keywords: fabrication; gan gaas; electrical quality; gaas sbds ... See more keywords