Effect of Ge interface control layer on the interfacial and electrical properties of TaYOx thin films on GaAs substrates
Sign Up to like & getrecommendations! Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-2916-1
Abstract: Effects of a Ge interface control layer on the electrical properties of RF sputter-deposited TaYOx on n-GaAs substrates are studied in detail. It is found that the incorporation of an ultrathin Ge layer in between… read more here.
Keywords: gaas substrates; interface control; control layer; electrical properties ... See more keywords
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.02.046
Abstract: Abstract Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1 0 0) GaAs substrates using selective area epitaxy (SAE). The… read more here.
Keywords: gaas substrates; gaas quantum; diblock copolymer; growth ... See more keywords
Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110501
Abstract: Abstract By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300- ∘ C) annealing plays… read more here.
Keywords: gaas substrates; gaas; post bonding; sacrificial layer ... See more keywords
High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2018 at "Optical Engineering"
DOI: 10.1117/1.oe.57.12.127104
Abstract: Abstract. InAsSb/AlSb barrier detectors were grown on (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with different active layers denoted as p + BppBpN + and p + Bpnn + . InAs0.81Sb0.19 absorber allows… read more here.
Keywords: detectors grown; inassb alsb; substrates molecular; gaas substrates ... See more keywords
Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13040681
Abstract: We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling… read more here.
Keywords: growth; gaas substrates; crystalline defects; faceted surfaces ... See more keywords