Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
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DOI: 10.1109/ted.2017.2653759
Abstract: We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and… read more here.
Keywords: bandgap semiconductors; power devices; extreme bandgap; wide extreme ... See more keywords