Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy
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DOI: 10.1063/1.5035281
Abstract: Single junction solar cells employing 30-period and 50-period GaAs0.965Bi0.035/GaAs0.75P0.25 (Eg ∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by metal organic vapor phase epitaxy. Room temperature photoluminescence measurements indicated a peak spectral emission at… read more here.
Keywords: junction solar; quantum; single junction; gaas0 965bi0 ... See more keywords