Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2
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DOI: 10.1016/j.jcrysgro.2016.11.056
Abstract: Using ab initio calculations, a simple model for GaAs1-xNx vapor-phase epitaxy on (100) surface of GaAs was created. By studying As2 and H2 molecules adsorptions and As/N atom substitutions on (100) GaAs surfaces, we obtain… read more here.
Keywords: gaas1 xnx; gaas1; model; stability ... See more keywords