Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric
Sign Up to like & getrecommendations! Published in 2020 at "Materials today communications"
DOI: 10.1016/j.mtcomm.2020.101964
Abstract: Abstract In this paper, for the first time we proposed a novel GaAs1-xSbx-on-Insulator (GASOI) FinFET on GaAS substrate using well calibrated simulation models. Impact of this novel channel material GaAs1-xSbx in FinFET performance is thoroughly… read more here.
Keywords: novel gaas1; xsbx insulator; xsbx; performance ... See more keywords
Vis-IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b13559
Abstract: Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here,… read more here.
Keywords: inas core; room temperature; xsbx inas; room ... See more keywords
Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5003097
Abstract: Photoluminescence properties of InAs/GaAs1−xSbx quantum dots (QDs) are investigated with respect to the Sb-composition of x = 0, 0.15, and 0.25. The QDs demonstrate a type-II band alignment for x = 0.15 and 0.25. In contrast, with well-defined InAs/GaAs… read more here.
Keywords: inas gaas1; carrier dynamics; dynamics inas; carrier ... See more keywords