Spontaneous nanostructure formation in GaAsBi alloys
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.04.026
Abstract: Abstract Bismuth containing semiconductor alloys are of increasing interest for their potential applications as infrared devices, though material quality in these materials has often proven problematic. This work shows a series of GaAsBi films grown… read more here.
Keywords: gaasbi; nanostructure formation; spontaneous nanostructure; microscopy ... See more keywords
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-13191-9
Abstract: Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been… read more here.
Keywords: defects type; deep level; level; gaasbi ... See more keywords
Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 127 to 141 μm
Sign Up to like & getrecommendations! Published in 2019 at "Photonics Research"
DOI: 10.1364/prj.7.000508
Abstract: Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400 nm at 300 K. The 750 nm… read more here.
Keywords: wave operation; disk; gaasbi; continuous wave ... See more keywords
Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions
Sign Up to like & getrecommendations! Published in 2018 at "Lithuanian Journal of Physics"
DOI: 10.3952/physics.v58i1.3658
Abstract: A series of 1.5 μm-thick epitaxial GaAsBi layers have been grown by molecular beam epitaxy on semi-insulating GaAs(100) substrates at temperatures ranging from 300 to 370°C. Complex studies were carried out with a focus to… read more here.
Keywords: gaasbi layers; epitaxial gaasbi; thick epitaxial; layers terahertz ... See more keywords