The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures
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DOI: 10.1016/j.spmi.2016.12.026
Abstract: Abstract Acoustic-excitant interaction of GaAsP light emitting diodes (initial and irradiated by 2 MeV electrons) was studied. Structure based on GaAs 1 - х P х solid solutions, grown by epitaxy from the vapor phase, were… read more here.
Keywords: dislocation; intensity; influence acoustic; gaasp ... See more keywords