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GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

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1 Published in 2017 at "Journal of Applied Physics"

DOI: 10.1063/1.4974969

Abstract: Heterojunction bipolar transistors with GaAsxP1−x bases and collectors and InyGa1−yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1−x compositions were used, ranging… read more here.

Keywords: ingap; gaasp ingap; heterojunction bipolar; bipolar transistors ... See more keywords