Influence of the excitation density and temperature on the optical properties of type I InAs/GaAsSb quantum dots
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2020.117368
Abstract: Abstract In this study, the optical properties of InAs quantum dots (QDs) were characterized using photoluminescence (PL) measurements. The QDs, capped with GaAs and GaAs1−xSbx (x = 6%) strain-reducing layer (SRL), were grown by Molecular Beam Epitaxy.… read more here.
Keywords: temperature; excitation density; optical properties; density ... See more keywords
Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc2c6
Abstract: In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p–i–n nanowires (NWs) on p-Si for the ensemble photodetector (PD) application in… read more here.
Keywords: growth; near infrared; axial gaassb; gaassb ... See more keywords
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2854546
Abstract: We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral gain cutoff frequencies of around… read more here.
Keywords: transferred substrate; gain; gaassb; substrate inp ... See more keywords