Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates
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DOI: 10.1016/j.jcrysgro.2020.125970
Abstract: Abstract Tensile-strained InGaAs and GaAsSb layers have potential as strain-compensation layers for tunneling field-effect-transistors containing compressively strained InGaAs channel layers. Here, we compare structural and photoluminescence properties between 1% tensile-strained InGaAs and GaAsSb layers grown… read more here.
Keywords: tensile strained; structural photoluminescence; gaassb layers; ingaas gaassb ... See more keywords