First-Principles study of structural, elastic and electronic properties for the KT-GaBP2 semiconductor under pressure
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DOI: 10.1016/j.mssp.2020.105585
Abstract: Abstract The structural, elastic and electronic properties of KT-GaBP 2 under pressure ranging from 0 to 70 GPa were investigated by using density functional theory. The elastic stiffness constants were calculated under different pressures and… read more here.
Keywords: structural elastic; electronic properties; gabp; elastic electronic ... See more keywords