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Published in 2018 at "IEEE Journal of Quantum Electronics"
DOI: 10.1109/jqe.2017.2779880
Abstract: It was found experimentally that growing an ultrathin GaP interlayer/sublayer before InAs quantum dots (QDs) grown on InGaAsP barrier lattice-matched to InP (001) substrates is an efficient way to tune the emission wavelength of InAs/InP…
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Keywords:
gain spectral;
spectral bandwidth;
quantum dots;
inas inp ... See more keywords