In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617040066
Abstract: Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results… read more here.
Keywords: graded gainsb; compositionally graded; buffer layers; algainsb buffer ... See more keywords