The toxicology of gallium oxide in comparison with gallium arsenide and indium oxide.
Sign Up to like & getrecommendations! Published in 2020 at "Environmental toxicology and pharmacology"
DOI: 10.1016/j.etap.2020.103437
Abstract: Gallium arsenide (GaAs) and indium oxide (In2O3) are used in electronic industries at high and increasing tonnages since decades. Gallium oxide (Ga2O3) is an emerging wide-bandgap transparent conductive oxide with as yet little industrial use.… read more here.
Keywords: indium oxide; gallium; gallium arsenide; gallium oxide ... See more keywords
Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction
Sign Up to like & getrecommendations! Published in 2019 at "Optik"
DOI: 10.1016/j.ijleo.2019.01.078
Abstract: Abstract In this article, a computational study on the photovoltaic performance and electrical characteristics of graphene/gallium arsenide Schottky junction solar cell with structure graphene/SiO2/GaAs/Au is undertaken. Graphene is used as a transparent current conducting electrode.… read more here.
Keywords: gallium arsenide; graphene gallium; arsenide schottky; junction ... See more keywords
A possible protein model involved in gallium arsenide leaching by Cellulosimicrobium funkei
Sign Up to like & getrecommendations! Published in 2019 at "Minerals Engineering"
DOI: 10.1016/j.mineng.2019.04.002
Abstract: Abstract Gallium (Ga), in the form of gallium arsenide (GaAs) has been extensively used as a substrate in semiconductor materials. The use of microorganisms is fast becoming a promising alternative to not only leach the… read more here.
Keywords: cellulosimicrobium funkei; gallium arsenide; binding proteins; possible protein ... See more keywords
Carrier-Transport Study of Gallium Arsenide Hillock Defects
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619014909
Abstract: Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In… read more here.
Keywords: gallium arsenide; microscopy; transport; hillock defects ... See more keywords
Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Microwave and Wireless Technologies"
DOI: 10.1017/s1759078719001521
Abstract: Abstract We present details of on-wafer-level 16-term error model calibration kits used for the characterization of W-band circuits based on a grounded coplanar waveguide (GCPW). These circuits were fabricated on a thin gallium arsenide (GaAs)… read more here.
Keywords: calibration; gallium arsenide; measurements band; wafer measurements ... See more keywords
Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c15243
Abstract: Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films on a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide… read more here.
Keywords: monocrystalline; halide perovskite; gallium arsenide; lead halide ... See more keywords
Phase-Matched Mid-Infrared Difference Frequency Generation Using a Nanostructured Gallium Arsenide Metamaterial With Nanoholes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Photonics Journal"
DOI: 10.1109/jphot.2020.2992192
Abstract: Phase-matched wavelength conversion is achieved in difference frequency generation (DFG) in a structure of gallium arsenide (GaAs) with periodic arrays of nanoholes. Linear properties (refractive indices) of the structure are determined from the S-parameters of… read more here.
Keywords: frequency generation; gallium arsenide; phase matched; difference ... See more keywords
Optical Transitions from Core d Levels of Gallium Arsenide
Sign Up to like & getrecommendations! Published in 2018 at "Physics of the Solid State"
DOI: 10.1134/s1063783418030241
Abstract: An improved parameter-free method of joint Argand diagrams was used to expand the permittivity spectrum of gallium arsenide in a region of 19–26 eV into 12 bands of optical transitions with determining their maximum and… read more here.
Keywords: optical transitions; levels gallium; gallium arsenide; core levels ... See more keywords
The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide
Sign Up to like & getrecommendations! Published in 2018 at "Technical Physics Letters"
DOI: 10.1134/s1063785018010169
Abstract: Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag… read more here.
Keywords: low temperature; temperature; annealing regime; gallium arsenide ... See more keywords
Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Nanoscience"
DOI: 10.1142/s0219581x19500194
Abstract: Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimu... read more here.
Keywords: arsenide implanted; implanted silicon; intersubband absorption; gallium arsenide ... See more keywords
Internal structuring of gallium arsenide using short laser pulses.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.471432
Abstract: Laser writing inside semiconductors attracts attention as a possible route for three-dimensional integration in advanced micro technologies. In this context, gallium arsenide (GaAs) is a material for which the best conditions for laser internal modification… read more here.
Keywords: laser; structuring gallium; gallium arsenide; internal structuring ... See more keywords