Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.
Sign Up to like & getrecommendations! Published in 2017 at "Advanced materials"
DOI: 10.1002/adma.201605092
Abstract: Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates,… read more here.
Keywords: gallium nitride; bright room; room temperature; temperature single ... See more keywords
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023)
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202208960
Abstract: Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN-based devices,… read more here.
Keywords: gan surface; gallium nitride; gallium; gallium oxynitride ... See more keywords
Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202300780
Abstract: Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential… read more here.
Keywords: temperature; energy storage; gallium nitride; high temperature ... See more keywords
Theoretical study of gallium nitride nanocage as a carrier for 5-fluorouracil anticancer drug
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Molecular Modeling"
DOI: 10.1007/s00894-019-4147-8
Abstract: In this paper, the possible interactions between 5-fluorouracil (5FU) as an anticancer drug and gallium nitride (Ga12N12) nanocage (NC) in aqueous solution have been investigated using DFT/CPCM/B3LYP-D/6-31G(d,p) level of theory. Eleven different orientations were used… read more here.
Keywords: fluorouracil anticancer; nitride nanocage; drug; anticancer drug ... See more keywords
The Effect of Functionalization on Spin-Polarized Transport of Gallium Nitride–Based Magnetic Tunnel Junctions
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-019-05307-1
Abstract: Using first-principles spin-polarized density functional theory computations, the effect of functionalization (fluorination and hydrogenation) on spin-polarized transport of gallium nitride (GaN) nanosheet–based magnetic tunnel junction (MTJ) with CrO 2 as electrodes is investigated. The results… read more here.
Keywords: transport gallium; effect functionalization; gallium nitride; spin ... See more keywords
Spectra of the Gallium Nitride Growth Traps
Sign Up to like & getrecommendations! Published in 2020 at "Russian Physics Journal"
DOI: 10.1007/s11182-020-01971-2
Abstract: The energy spectra of growth traps in the epitaxial layers of undoped and doped gallium nitride grown under various technological conditions are analyzed. read more here.
Keywords: spectra gallium; gallium nitride; nitride growth; growth traps ... See more keywords
Honeycomb-like gallium nitride prepared via dual-ion synergistic etching mechanism using amino acid as etchant
Sign Up to like & getrecommendations! Published in 2021 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2021.138588
Abstract: Abstract Amino acid, taking the glycine (Gly) for example, was used for the first time as etchant to assemble honeycomb-like structure on gallium nitride (GaN) by photo-electrochemical etching (PECE) technique. Conspicuously, a novel dual-ion dissolution… read more here.
Keywords: etching mechanism; honeycomb like; dual ion; amino acid ... See more keywords
Metal-assisted photochemical etching of gallium nitride using electrodeposited noble metal nanoparticles as catalysts
Sign Up to like & getrecommendations! Published in 2017 at "Electrochemistry Communications"
DOI: 10.1016/j.elecom.2017.01.021
Abstract: Porous gallium nitride (PGaN) layers were fabricated by metal-assisted photochemical etching (MaPCE) using electrodeposited platinum nanoparticles (PtNPs) or gold nanoparticles (AuNPs) as catalysts. After identification of a suitable negative potential and appropriate cyclic voltammetry (CV)… read more here.
Keywords: metal assisted; using electrodeposited; metal; gallium nitride ... See more keywords
Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Manufacturing Processes"
DOI: 10.1016/j.jmapro.2020.06.018
Abstract: Abstract N-vacancy is an inevitable common point defect in GaN, but its behavior is still unclear during nano-grinding which is an indispensable process technique during some GaN devices manufacturing. In this study, we attempted to… read more here.
Keywords: molecular dynamics; vacancy; gallium nitride; nano grinding ... See more keywords
A theoretical study on the metal contacts of monolayer gallium nitride (GaN)
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.05.002
Abstract: Abstract Low-Schottky barrier height (SBH) metal contacts to 2D materials is indispensable for achieving high performance in atomic layer 2D materials channel based optoelectronic devices. In this study, we systematically investigate the detailed face contact… read more here.
Keywords: metal contacts; metal; nitride gan; gallium nitride ... See more keywords
An analytical model for estimation of the stress field and cracks caused by scratching anisotropic single crystal gallium nitride
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105446
Abstract: Abstract Single crystal gallium nitride will produce subsurface damage during processing, and studying the total stress field during scratching gallium nitride is advantageous for predicting and controlling subsurface damage. The total stress field during scratching… read more here.
Keywords: single crystal; stress field; field; gallium nitride ... See more keywords