Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition
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DOI: 10.1088/1674-4926/24020017
Abstract: In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved… read more here.
Keywords: gallium surfactant; microwave plasma; chemical vapor; plasma chemical ... See more keywords