Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates
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DOI: 10.1134/s1063774517050121
Abstract: Thin Ga2Se3 layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different… read more here.
Keywords: 100 111; ordering ga2se3; 111 123; gallium vacancy ... See more keywords
Electrical and optical properties of gallium vacancy complexes in ammonothermal GaN
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DOI: 10.7567/apex.10.075506
Abstract: Bulk GaN crystals were grown by the acidic ammonothermal method and doped with oxygen at concentrations ranging from 1.5 × 1018 to 2.7 × 1019 cm−3. VGa complexes were detected by Fourier transform infrared (FTIR)… read more here.
Keywords: properties gallium; optical properties; vacancy complexes; electrical optical ... See more keywords