High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5534-5
Abstract: High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding… read more here.
Keywords: gallium zinc; performance; film; stability ... See more keywords
Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5946-2
Abstract: To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each… read more here.
Keywords: gallium zinc; layer; aluminum oxide; al2o3 barrier ... See more keywords
Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
Sign Up to like & getrecommendations! Published in 2018 at "Korean Journal of Chemical Engineering"
DOI: 10.1007/s11814-018-0034-8
Abstract: Plasma damage of indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) was investigated. The IGZO TFT was fabricated and the performance was measured before and after BCl3 and/or Cl2 plasma treatment to evaluate the IGZO damage. The… read more here.
Keywords: gallium zinc; thin film; zinc oxide; damage ... See more keywords
Giant enhancement of superconductivity in arrays of ultrathin gallium and zinc sub-nanowires embedded in zeolite
Sign Up to like & getrecommendations! Published in 2018 at "Materials Today Physics"
DOI: 10.1016/j.mtphys.2018.08.001
Abstract: The authors thank Walter Ho and Ulf Lampe for their help. This project is supported by the Research Grants Council of Hong Kong grant RGC 16304314 and the collaborative grant KAUST18SC01 and URF/1/3435. R. L.… read more here.
Keywords: giant enhancement; gallium zinc; ultrathin gallium; arrays ultrathin ... See more keywords
Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control
Sign Up to like & getrecommendations! Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-25938-w
Abstract: The optimization of zirconium oxide (ZrO2) crystallinity for gate insulators (GI) in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was studied to enhance the performance of dynamic random-access memory (DRAM) cell transistors. ZrO2 films… read more here.
Keywords: zinc oxide; indium gallium; zro2; gallium zinc ... See more keywords
Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0140953
Abstract: We investigate the low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (AM/AF's). It is revealed that the noise generation… read more here.
Keywords: gallium zinc; noise characteristics; low frequency; frequency noise ... See more keywords
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0271394
Abstract: While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in… read more here.
Keywords: cryogenic temperatures; zinc oxide; indium gallium; gallium zinc ... See more keywords
Electrospun indium gallium zinc oxide semiconductor nanofibers with different persistent photoconductivity effects at low and high temperatures
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ae1f26
Abstract: In recent years, persistent photoconductivity (PPC) has received significant attention due to its potential applications in a wide range of fields. This study focuses on the PPC observed in electrospun indium gallium zinc oxide (IGZO)… read more here.
Keywords: zinc oxide; indium gallium; photoconductivity; gallium zinc ... See more keywords
Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad28f4
Abstract: In this study, a biosensor utilizing a dielectric-modulated amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) is introduced. TFT biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power… read more here.
Keywords: indium gallium; biosensor; gallium zinc; sensitivity ... See more keywords
Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT)
Sign Up to like & getrecommendations! Published in 2019 at "Materials Research Express"
DOI: 10.1088/2053-1591/ab11a5
Abstract: Amorphous indium gallium zinc oxide (a-IGZO) are promising for developing thin film transistors (TFTs) because of their large electron mobility, small threshold voltage (Vth), and low temperature fabrication process. In this study, we have investigated… read more here.
Keywords: amorphous indium; indium gallium; thin film; effect ... See more keywords
Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide From the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2996242
Abstract: A heterojunction diode between n-type amorphous indium-gallium-zinc-oxide (a-IGZO) and p-type nickel oxide is experimentally demonstrated with self-aligned junction termination. The diode has an abrupt, non-destructive breakdown behavior, and the avalanche breakdown is confirmed by the… read more here.
Keywords: indium gallium; gallium zinc; zinc oxide;